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  tnd027sw no.7437-1/9 features ? n-channel mosfet built in ? halogen free compliance ? overheat protection (self recovery type) ? overcurrent protection (self recovery type current limiting function) ? overvoltage protection ? incorporates two sets of circuit speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v ds 60 v output current i o (dc) 1.5 a input voltage v in --0.3 to +10 v allowable power dissipation p d when mounted on ceramic substrate (1200mm 2 0.8mm) 1unit 1.3 w when mounted on ceramic substrate (1200mm 2 0.8mm) 1.7 w operating supply voltage v ds (opr) 40 v operating temperature topr --40 to +85 c junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7072-003 in gnd(s) out(d) overvoltage protective circuit overcurrent protective circuit output current control overheat protective circuit esd protective circuit gate shutdown circuit ordering number : EN7437d d0512 tkim tc-00002832/o2611 tkim/d2607ip tiim tc-00001114/o2203 tsim/51503 tsim ta-100479 sanyo semiconductors data sheet tnd027sw expd(excellent power device) lowside power switch lamp-, solenoid-, and motor-driving applications http://www.sanyosemi.com/en/network/ 4.9 0.22 6.0 3.9 1.375 14 5 8 0.445 1.27 0.715 0.375 1.55 0.175 0.254 (gage plane) 1 : gnd1 2 : in1 3 : gnd2 4 : in2 5 : out2 6 : out2 7 : out1 8 : out1 sanyo : soic8 product & package information ? package : soic8 ? jeita, jedec : sc-87, sot-96 ? minimum packing quantity : 2,500 pcs./reel packing type: tl marking block diagram tl tnd lot no. 027 tnd027sw-tl-2h
tnd027sw no.7437-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min. typ. max. drain-to-source clamp voltage v ds, clamp v in =0v, i o =1ma 60 v output-off current i dss 1v in =0v, v ds =50v 10 a i dss 2v in =0v, v ds =12v 5 a input threshold voltage v in (th) v ds =5v, i o =1ma 1.0 1.5 2.0 v protection circuit operating input voltage v in (opr) 4 10 v drain-to-source on resistance r ds (on) v in =5v, i o =1a 0.3 0.4 input current (output on) i in v in =5v 0.6 ma over-heat detecting temperature tj(sd) v in =5v, i o =1a 120 150 190 c over-current detecting current is v in =5v 3.0 6.0 9.0 a over-current limit (peak) i lmt v in =5v 3.0 6.0 9.0 a input clamp voltage v in, clamp i in =1ma 10 v notes : 1. overcurrent protection circuit limits the output current to the range of overcurrent limit value. 2. during overheat protecting operation, output current is turned off. ordering information devices package shipping memo tnd027sw-tl-2h soic8 2,500pcs./reel pb free and halogen free 0.2 0.4 0.6 0.8 1.2 1.0 1.4 0 024681012 0.2 0.4 0.6 0.8 1.0 0 0246810 i in -- ta it05235 --50 --25 0.1 0.2 0.3 0.4 0.5 0 0 0 25 50 100 75 --50 --25 0 25 50 100 75 it05233 r ds (on) -- v in r ds (on) -- ta it05234 i in -- v in it05236 0.02 0.12 0.10 0.08 0.06 0.04 v in =5v i in (abnormal) i in (normal) i o =1a i o =1a ta=85 c 25 c --40 c 4v 5v 6v ta=25 c drain-to-source on resistance, r ds (on) -- drain-to-source on resistance, r ds (on) -- ambient temperature, ta -- c ambient temperature, ta -- c input voltage, v in -- v input voltage, v in -- v input current, i in -- m a input current, i in -- m a
tnd027sw no.7437-3/9 0.2 0.4 0.6 0.8 1.2 1.4 1.0 2.0 1.8 1.6 0 123 v in (th) -- ta it05243 --50 --25 58 60 64 62 68 66 70 56 0.8 0 25 50 100 75 --50 --25 0 25 50 100 75 v ds , clamp -- ta it05241 v in , clamp -- ta it05242 i o -- v in it05244 1.0 2.0 1.8 1.6 1.4 1.2 v ds =24v v in =0v i o =1ma --50 --25 10 9 12 11 13 8 0 25 50 100 75 i in =1ma v ds =5v i o =1ma ambient temperature, ta -- c ambient temperature, ta -- c drain-to-source clamp voltage, v ds , clamp -- v ambient temperature, ta -- c threshold voltage, v in (th) -- v input clamp voltage, v in , clamp -- v input voltage, v in -- v output current, i o -- a ta=85 c 25 c --40 c 2 4 6 8 10 12 0 45678910 45678910 --50 --25 4 5 7 6 8 9 3 0 25 50 100 75 i s -- ta it05237 i s -- v in it05238 i lmt -- v in it05240 4v 5v 6v --50 --25 4 5 7 6 8 9 3 0 25 50 100 75 i lmt -- ta it05239 6v 5v 4v 4 5 7 6 8 9 3 ta=25 c ta=25 c ambient temperature, ta -- c ambient temperature, ta -- c input voltage, v in -- v input voltage, v in -- v overcurrent detecting current, i s -- a overcurrent limit, i lmt -- a overcurrent limit, i lmt -- a overcurrent detecting current, i s -- a
tnd027sw no.7437-4/9 4.0 4.5 142 144 152 150 148 146 154 160 158 156 140 5.0 5.5 6.0 tj(sd) -- v in it05245 0 0.5 1.0 1.3 1.5 it05247 0.2 0.4 0.8 0.6 1.0 1.4 1.2 1.3 0 p d -- ta p d (circuit2) -- p d (circuit1) it05248 ambient temperature, ta -- c overheat detecting temperature, tj(sd) -- c input voltage, v in -- v allowable power dissipation, p d -- w allowable power dissipation, p d (circuit2) -- w allowable power dissipation, p d (circuit1) -- w --40 --20 20 0 406080100 0.6 0.8 0.2 0.4 1.0 1.4 1.2 1.6 1.3 1.7 1.8 0 1unit total dissipation when mounted on ceramic substrate (1200mm 2 0.8mm) sample application circuit another sample application circuit (solenoid drive) ac100v ac24v out lamp lamp lamp in 5v 5v in 1 out 1 out 2 gnd 1, 2 in 2 5 v gnd tnd027sw tnd027sw micro- controller micro- controller micro- controller ac100v ac24v out solenoid solenoid in 5v 5v in 1 out 1 out 2 gnd 1, 2 in 2 5 v gnd tnd027sw tnd027sw micro- controller micro- controller micro- controller
tnd027sw no.7437-5/9 operation description ? the output power mosfet will be turned on when the input voltage exceeds the input threshold voltage (4 to 6v is recommended), and then the lamp will be turned on by the current owing to the lamp. conversely, the output power mosfet will be turned off when the input voltage goes below the input threshold voltage, and the lamp will be turned off. ? the inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent protecting circuit, which makes the lamp life longer. ? the internal overcurrent protection function limits the current of output power mosfet when output current of at least the overcurrent detecting current value ows at load short. besides, if the device temperature exceeds the allowable power dissipation, overheat protection function protects the power switch from being broken down by turning off the current of output power mosfet when tj comes to 150c (typical). ? as an example of application circuit, dc voltage can also be controlled as a solenoid drive. addition ? the diode between out and gnd in the block diagram is parasitic diode of the mosfet. ? not apply a voltage on in terminal during the period when out voltage is lower then gnd voltage when driving a solenoid or a motor. ? be sure connect a diode between out terminal and gnd terminal when you want to apply a voltage on in terminal under the above-stated state (that is, out voltage < gnd voltage).
tnd027sw no.7437-6/9 taping speci cation tnd027sw-tl-2h  3dfnlqj )rupdw 0d[lpxp 1xpehu ri ghylfhv frqwdlqhg sfv 3dfnlqj irupdw 3dfndjh 1dph &duulhu 7dsh 7\sh 5hho ,qqhu er[ 2xwhu er[ ,qqhu %2; : 2xwhu %2; : 62,& %     uhhov frqwdlqhg 'lphqvlrqv pp h[whuqdo ??  lqqhu er[hv frqwdlqhg 'lphqvlrqv pp h[whuqdo ?? /deho -(,7$ 3kdvh /($' )5((  -(,7$ 3kdvh  7<3( &2'( ?????????????? 7<3( ???????? 47< ???? sfv  /($' )5(( /27 ???????? 3$&.$*( ???????? 63(&,$/ ???????? 63(&,$/ =& $66(0%/< ',))86,21 5hho odeho,qqhu er[ odeho xqlw pp 3 7<3( ????????? 7 /27 ?? 4 47< ???? = 63(6,$/ ????????? 3dfnlqj phwkrg 5hho odeho  7\sh 1r /27 1r 4xdqwlw\ 2uljlq  2xwhu er[ odeho ,w lv d odeho dw wkh wlph ri idfwru\ vklsphqwv 7kh irup ri d odeho pd\ fkdqjh lq sk\vlfdo glvwulexwlrq surfhvv    /($' )5(( 127(  7kh /($' )5((  ghvfulswlrq vkrzv wkdw lw lv frpsohwh ohdg iuhh
tnd027sw no.7437-7/9  7dslqj frqiljxudwlrq  &duulhu wdsh vl]h xqlw pp  'hylfh sodfhphqw gluhfwlrq 3dfnlqj w\sh?????7/  /hdghu sruwlrq dqg wudlohu sruwlrq xqlw pp?  ru pruh 7udlohu sruwlrq 'hylfh prxqwlqj sruwlrq /hdghu sruwlrq  ru pruh ,goh sruwlrq  ru pruh &ryhu wdsh /hdghu sruwlrq  ru pruh 'hylfh prxqwlqj sruwlrq        s   s  s ??? ???????  s  s s  s  s  s  s feed d i rec t ion 5hh o &d uu lh u 7dsh 7/ 3lq  ,qgh[ )hhg 5rxqg +r oh
tnd027sw no.7437-8/9 outline drawing land pattern example tnd027sw-tl-2h mass (g) unit 0.082 * for reference mm unit: mm 1.75 1.27 0.65 5.60
tnd027sw no.7437-9/9 ps this catalog provides information as of december, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.


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